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High resolution photoemission study of interface formation between MgO and the selenium passivated InAs (100) surface

Identifieur interne : 000C03 ( Main/Repository ); précédent : 000C02; suivant : 000C04

High resolution photoemission study of interface formation between MgO and the selenium passivated InAs (100) surface

Auteurs : RBID : Pascal:14-0026756

Descripteurs français

Pascal (Inist)
- Photoémission, Sélénium, Niveau coeur, Nettoyage surface, Passivation, Oxyde de magnésium, Arséniure d'indium, Semiconducteur, Mg O, MgO, Se, As In, InAs, Composé minéral.
Wicri :
- concept : Composé minéral.

English descriptors

KwdEn :
- Core levels, Indium arsenides, Inorganic compounds, Magnesium oxide, Passivation, Photoemission, Selenium, Semiconductor materials, Surface cleaning.

Abstract

Interface formation between an ultra thin MgO layer and the selenium passivated InAs surface has been investigated by soft X-ray photoemission spectroscopy. Atomic hydrogen cleaning of the native oxide covered InAs at 360 °C produced an oxide and carbon free InAs surface. The selenium passivation of the atomically clean InAs showed evidence of arsenic replacement in the near surface region. Subsequent MgO deposition resulted in the appearance of an oxidized indium signal indicating that the bonding interaction between the MgO and the substrate is via indium-oxide bond formation. The conduction and valence band offsets were also estimated for this dielectric-semiconductor structure.

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Pascal:14-0026756

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">High resolution photoemission study of interface formation between MgO and the selenium passivated InAs (100) surface</title>
<author><name>RAJESH KUMAR CHELLAPPAN</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Physical Sciences, Dublin City University</s1>
<s2>Dublin</s2>
<s3>IRL</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Irlande (pays)</country>
<wicri:noRegion>Dublin</wicri:noRegion>
</affiliation>
</author>
<author><name>ZHESHEN LI</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>ISA, Institute of Physics and Astronomy, Aarhus University</s1>
<s2>8000 Aarhus</s2>
<s3>DNK</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Danemark</country>
<wicri:noRegion>8000 Aarhus</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Hughes, Greg" uniqKey="Hughes G">Greg Hughes</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Physical Sciences, Dublin City University</s1>
<s2>Dublin</s2>
<s3>IRL</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Irlande (pays)</country>
<wicri:noRegion>Dublin</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">14-0026756</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 14-0026756 INIST</idno>
<idno type="RBID">Pascal:14-0026756</idno>
<idno type="wicri:Area/Main/Corpus">000275</idno>
<idno type="wicri:Area/Main/Repository">000C03</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0169-4332</idno>
<title level="j" type="abbreviated">Appl. surf. sci.</title>
<title level="j" type="main">Applied surface science</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Core levels</term>
<term>Indium arsenides</term>
<term>Inorganic compounds</term>
<term>Magnesium oxide</term>
<term>Passivation</term>
<term>Photoemission</term>
<term>Selenium</term>
<term>Semiconductor materials</term>
<term>Surface cleaning</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Photoémission</term>
<term>Sélénium</term>
<term>Niveau coeur</term>
<term>Nettoyage surface</term>
<term>Passivation</term>
<term>Oxyde de magnésium</term>
<term>Arséniure d'indium</term>
<term>Semiconducteur</term>
<term>Mg O</term>
<term>MgO</term>
<term>Se</term>
<term>As In</term>
<term>InAs</term>
<term>Composé minéral</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Composé minéral</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Interface formation between an ultra thin MgO layer and the selenium passivated InAs surface has been investigated by soft X-ray photoemission spectroscopy. Atomic hydrogen cleaning of the native oxide covered InAs at 360 °C produced an oxide and carbon free InAs surface. The selenium passivation of the atomically clean InAs showed evidence of arsenic replacement in the near surface region. Subsequent MgO deposition resulted in the appearance of an oxidized indium signal indicating that the bonding interaction between the MgO and the substrate is via indium-oxide bond formation. The conduction and valence band offsets were also estimated for this dielectric-semiconductor structure.</div>
</front>
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<fA08 i1="01" i2="1" l="ENG"><s1>High resolution photoemission study of interface formation between MgO and the selenium passivated InAs (100) surface</s1>
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<fA11 i1="01" i2="1"><s1>RAJESH KUMAR CHELLAPPAN</s1>
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<fA11 i1="02" i2="1"><s1>ZHESHEN LI</s1>
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<sZ>3 aut.</sZ>
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<fA14 i1="02"><s1>ISA, Institute of Physics and Astronomy, Aarhus University</s1>
<s2>8000 Aarhus</s2>
<s3>DNK</s3>
<sZ>2 aut.</sZ>
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<fA20><s1>153-156</s1>
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<fA21><s1>2013</s1>
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<fA43 i1="01"><s1>INIST</s1>
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<s1>© 2014 INIST-CNRS. All rights reserved.</s1>
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<fA66 i1="01"><s0>NLD</s0>
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<fC01 i1="01" l="ENG"><s0>Interface formation between an ultra thin MgO layer and the selenium passivated InAs surface has been investigated by soft X-ray photoemission spectroscopy. Atomic hydrogen cleaning of the native oxide covered InAs at 360 °C produced an oxide and carbon free InAs surface. The selenium passivation of the atomically clean InAs showed evidence of arsenic replacement in the near surface region. Subsequent MgO deposition resulted in the appearance of an oxidized indium signal indicating that the bonding interaction between the MgO and the substrate is via indium-oxide bond formation. The conduction and valence band offsets were also estimated for this dielectric-semiconductor structure.</s0>
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<fC02 i1="03" i2="3"><s0>001B80</s0>
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<fC03 i1="01" i2="3" l="FRE"><s0>Photoémission</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Photoemission</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Sélénium</s0>
<s2>NC</s2>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Selenium</s0>
<s2>NC</s2>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Niveau coeur</s0>
<s5>03</s5>
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<fC03 i1="03" i2="3" l="ENG"><s0>Core levels</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Nettoyage surface</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Surface cleaning</s0>
<s5>04</s5>
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<fC03 i1="05" i2="3" l="FRE"><s0>Passivation</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Passivation</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Oxyde de magnésium</s0>
<s5>15</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Magnesium oxide</s0>
<s5>15</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Magnesio óxido</s0>
<s5>15</s5>
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<fC03 i1="07" i2="3" l="FRE"><s0>Arséniure d'indium</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>16</s5>
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<fC03 i1="08" i2="3" l="FRE"><s0>Semiconducteur</s0>
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<fC03 i1="08" i2="3" l="ENG"><s0>Semiconductor materials</s0>
<s5>17</s5>
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<fC03 i1="09" i2="3" l="FRE"><s0>Mg O</s0>
<s4>INC</s4>
<s5>32</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>MgO</s0>
<s4>INC</s4>
<s5>33</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Se</s0>
<s4>INC</s4>
<s5>34</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>As In</s0>
<s4>INC</s4>
<s5>35</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>InAs</s0>
<s4>INC</s4>
<s5>36</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Composé minéral</s0>
<s5>62</s5>
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<fC03 i1="14" i2="3" l="ENG"><s0>Inorganic compounds</s0>
<s5>62</s5>
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<fN21><s1>027</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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High resolution photoemission study of interface formation between MgO and the selenium passivated InAs (100) surface

High resolution photoemission study of interface formation between MgO and the selenium passivated InAs (100) surface

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri